- 您现在的位置：买卖IC网 > PDF目录299522 > MT45W2MW16BBB-856WT 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 PDF资料下载
参数资料
| 型号： | MT45W2MW16BBB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54 |
| 文件页数： | 1/56页 |
| 文件大小： | 709K |
| 代理商： | MT45W2MW16BBB-856WT |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页
09005aef80be1fbd pdf/09005aef80be2036 zip
Burst CellularRAM_1.fm - Rev. D 9/04 EN
1
2003 Micron Technology, Inc. All rights reserved.
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
BURST
CellularRAMTM
MT45W4MW16BFB
MT45W2MW16BFB
Features
Single device supports asynchronous, page, and burst
operations
VCC, VCCQ Voltages
1.70V–1.95V VCC
1.70V–3.30V VCCQ
Random Access Time: 70ns
Burst Mode Write Access
Continuous burst
Burst Mode Read Access
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz (tCLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
tACLK: 6.5ns @ 104 MHz
Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Initial access, burst READ: (39ns [4 clocks]
@ 104 MHz) < 35mA
Continuous burst READ < 15mA
Standby: 120A (64Mb), 110A (32MB)—standard
100A (64Mb), 90A (32Mb)—low-power option
Deep power-down < 10A
Low-Power Features
Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
Figure 1: 54-Ball VFBGA
Part Number Example:
MT45W2MW16BFB-706LWT
Options
Designator
Configuration:
4 Meg x 16
MT45W4MW16B
2 Meg x 16
MT45W2MW16B
VCC Core Voltage Supply: 1.8V
VCCQ I/O Voltage: 1.8V
Package
54-ball VFBGA
FB
54-ball VFBGA—Lead-free
BB1
Timing
60ns access
-601
70ns access
-70
85ns access
-85
Options (continued)
Designator
Frequency
66 MHz
6
80 MHz
8
104 MHz
11
Standby power
Standard
None
Low-power
L
Operating Temperature Range
Wireless (-30°C to +85°C)
WT2
Industrial (-40°C to +85°C)
IT1
NOTE:
1. Contact factory.
2. -30°C exceeds the CellularRAM Workgroup 1.0
specification of -25°C.
A
B
C
D
E
F
G
H
J
1
2
3
4
5
6
Top View
(Ball Down)
LB#
DQ8
DQ9
VSSQ
VCCQ
DQ14
DQ15
A18
WAIT
OE#
UB#
DQ10
DQ11
DQ12
DQ13
A19
A8
CLK
A0
A3
A5
A17
A21
A14
A12
A9
ADV#
A2
CE#
DQ1
DQ3
DQ4
DQ5
WE#
A11
NC
CRE
DQ0
DQ2
VCC
VSS
DQ6
DQ7
A20
NC
A1
A4
A6
A7
A16
A15
A13
A10
NC
相关PDF资料 |
PDF描述 |
|---|---|
| MT46H32M32LGCM-5IT:A | 32M X 32 DDR DRAM, 5 ns, PBGA90 |
| MT46HC32M16LFCX-75:B | 32M X 16 DDR DRAM, 7.5 ns, PBGA90 |
| MT46HC32M16LGCM-54IT:B | 32M X 16 DDR DRAM, 5.4 ns, PBGA90 |
| MT47H32M16BT-37VL:A | 32M X 16 DDR DRAM, 0.5 ns, PBGA92 |
| MT47H64M16HQ-3IT:G | 64M X 16 DDR DRAM, 0.4 ns, PBGA60 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MW16BFB-601 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-701 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays |
| MT45W2MW16BFB-708 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS - Trays |
| MT45W2MW16BFB-856 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays |
发布紧急采购，3分钟左右您将得到回复。