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参数资料
| 型号： | MT45W2MW16BBB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54 |
| 文件页数： | 18/56页 |
| 文件大小： | 709K |
| 代理商： | MT45W2MW16BBB-856WT |
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4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
25
2003 Micron Technology, Inc. All rights reserved.
NOTE:
1. -30°C exceeds the CellularRAM Workgroup 1.0 specification of -25°C.
2. Input signals may overshoot to VccQ + 1.0V for periods less than 2ns during transitions.
3. VIH (MIN) value is not aligned with CellularRAM Workgroup 1.0 specification of VCCQ - 0.4V.
4. Input signals may undershoot to Vss - 1.0V for periods less than 2ns during transitions
5. BCR[5:4] = 00b.
6. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current
required to drive output capacitance expected in the actual system.
7. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. In order to achieve low standby current,
all inputs must be driven to either VCCQ or VSS. ISB might be slightly higher for up to 500ms after power-up, or after
changes to the PAR array partition.
Table 8:
Electrical Characteristics and Operating Conditions
Wireless Temperature1 (-30C < TC < +85C); Industrial Temperature (-40C < TC < +85C)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Supply Voltage
VCC
1.70
1.95
V
I/O Supply Voltage
VCCQ
W: 1.8V
1.70
3.30
V
Input High Voltage
VIH
1.4
VCCQ + 0.2
V
2, 3
Input Low Voltage
VIL
-0.20
0.4
V
4
Output High Voltage
IOH = -0.2mA
VOH
0.80 VCCQV
5
Output Low Voltage
IOL = +0.2mA
VOL
0.20 VCCQV
5
Input Leakage Current
VIN = 0 to VCCQILI
1A
Output Leakage Current
OE# = VIH or
Chip Disabled
ILO
1A
Operating Current
Asynchronous Random READ/
WRITE
VIN = VCCQ or 0V
Chip Enabled,
IOUT = 0
ICC1
-70
25
mA
6
-85
20
Asynchronous Page READ
ICC1P
-70
15
mA
6
-85
12
Initial Access, Burst READ/WRITE
ICC2
104 MHz
35
mA
6
80 MHz
35
66 MHz
30
Continuous Burst READ
ICC3R
104 MHz
20
mA
6
80 MHz
18
66 MHz
15
Continuous Burst WRITE
ICC3W
104 MHz
35
mA
6
80 MHz
35
66 MHz
30
Standby Current
VIN = VCCQ or 0V
CE# = VCCQ
ISB
64Mb—Std
120
A
7
64Mb—Opt. L
100
32MB—Std
110
32Mb—Opt. L
90
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相关代理商/技术参数 |
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|---|---|
| MT45W2MW16BFB-601 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-701 WT | 制造商:Micron Technology Inc 功能描述: |
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| MT45W2MW16BFB-856 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays |
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