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参数资料
| 型号： | MT45W2MW16BBB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54 |
| 文件页数： | 11/56页 |
| 文件大小： | 709K |
| 代理商： | MT45W2MW16BBB-856WT |
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4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
19
2003 Micron Technology, Inc. All rights reserved.
Burst Length (BCR[2:0])
Default = Continuous Burst
Burst lengths define the number of words the device
outputs during a burst READ operation. The device sup-
ports a burst length of 4, 8, or 16 words. The device can
also be set in continuous burst mode where data is out-
put sequentially without regard to address boundaries;
the internal address wraps to 000000h if the device is
read past the last address. WRITE bursts are always
performed using continuous burst mode.
Burst Wrap (BCR[3])
Default = Burst No Wrap
The burst wrap option determines if a 4-, 8-, or 16-
word burst READ wraps within the burst length, or
steps through sequential addresses. If the wrap option
is not enabled, the device outputs data from sequential
addresses without regard to burst boundaries; the
internal address wraps to 000000h if the device is read
past the last address.
Output Impedance (BCR[5])
Default = Outputs Use Full Drive Strength
The output driver strength can be altered to adjust
for different data bus loading scenarios. The reduced-
strength option will be more than adequate in stacked
chip (Flash + CellularRAM) environments when there is
a dedicated memory bus. The reduced-drive-strength
option is included to minimize noise generated on the
data bus during READ operations. Normal output
impedance should be selected when using a discrete
CellularRAM device in a more heavily loaded data bus
environment. Partial drive is approximately one-quar-
ter full drive strength. Outputs are configured at full
drive strength during testing.
Table 4:
Sequence and Burst Length
BURST WRAP
STARTING
ADDRESS
4-WORD
BURST
LENGTH
8-WORD
BURST LENGTH
16-WORD BURST LENGTH
CONTINUOUS BURST
BCR[3]
WRAP
(DECIMAL)
LINEAR
0Yes
0
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14-15
0-1-2-3-4-5-6-…
1
1-2-3-0
1-2-3-4-5-6-7-0
1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-0
1-2-3-4-5-6-7-…
2
2-3-0-1
2-3-4-5-6-7-0-1
2-3-4-5-6-7-8-9-10-11-12-13-14-15-0-1
2-3-4-5-6-7-8-…
3
3-0-1-2
3-4-5-6-7-0-1-2
3-4-5-6-7-8-9-10-11-12-13-14-15-0-1-2
3-4-5-6-7-8-9-…
4
4-5-6-7-0-1-2-3
4-5-6-7-8-9-10-11-12-13-14-15-0-1-2-3
4-5-6-7-8-9-10-…
5
5-6-7-0-1-2-3-4
5-6-7-8-9-10-11-12-13-14-15-0-1-2-3-4
5-6-7-8-9-10-11-…
6
6-7-0-1-2-3-4-5
6-7-8-9-10-11-12-13-14-15-0-1-2-3-4-5
6-7-8-9-10-11-12-
7
7-0-1-2-3-4-5-6
7-8-9-10-11-12-13-14-15-0-1-2-3-4-5-6
7-8-9-10-11-12-13-…
...
14
14-15-0-1-2-3-4-5-6-7-8-9-10-11-12-13
14-15-16-17-18-19-20-..
15
15-0-1-2-3-4-5-6-7-8-9-10-11-12-13-14
15-16-17-18-19-20-21..
1No
0
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14-15
0-1-2-3-4-5-6-…
1
1-2-3-4
1-2-3-4-5-6-7-8
1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-16
1-2-3-4-5-6-7-…
2
2-3-4-5
2-3-4-5-6-7-8-9
2-3-4-5-6-7-8-9-10-11-12-13-14-15-16-17
2-3-4-5-6-7-8-…
3
3-4-5-6
3-4-5-6-7-8-9-10
3-4-5-6-7-8-9-10-11-12-13-14-15-16-17-18
3-4-5-6-7-8-9-…
4
4-5-6-7-8-9-10-11
4-5-6-7-8-9-10-11-12-13-14-15-16-17-18-19
4-5-6-7-8-9-10-…
5
5-6-7-8-9-10-11-12
5-6-7-8-9-10-11-12-13-...-15-16-17-18-19-20
5-6-7-8-9-10-11…
6
6-7-8-9-10-11-12-13
6-7-8-9-10-11-12-13-14-...-16-17-18-19-20-21
6-7-8-9-10-11-12…
7
7-8-9-10-11-12-13-14
7-8-9-10-11-12-13-14-...-17-18-19-20-21-22
7-8-9-10-11-12-13…
...
14
14-15-16-17-18-19-...-23-24-25-26-27-28-29
14-15-16-17-18-19-20-…
15
15-16-17-18-19-20-...-24-25-26-27-28-29-30
15-16-17-18-19-20-21-…
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MW16BFB-601 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-701 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays |
| MT45W2MW16BFB-708 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS - Trays |
| MT45W2MW16BFB-856 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays |
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