参数资料
型号: MT45W2MW16BBB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
文件页数: 27/56页
文件大小: 709K
代理商: MT45W2MW16BBB-856WT
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
33
2003 Micron Technology, Inc. All rights reserved.
Figure 25: Asynchronous READ
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VIH
VIL
A[21:0]
ADV#
CE#
LB#/UB#
OE#
WE#
WAIT
DQ[15:0]
VALID ADDRESS
tAA
tHZ
tBA
High-Z
tRC
tCO
tBHZ
tOHZ
tHZ
tOE
tCEW
VALID OUTPUT
High-Z
UNDEFINED
DON’T CARE
tBLZ
tLZ
tOLZ
Table 19:
Asynchronous READ Timing Parameters
SYMBOL
-70x
-856
UNITS
SYMBOL
-70x
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAA
70
85
ns
tHZ
88
ns
tBA
70
85
ns
tLZ
10
ns
tBHZ
8
ns
tOE
20
ns
tBLZ
10
ns
tOHZ
8
ns
tCEW
1
7.5
1
7.5
ns
tOLZ
5
ns
tCO
70
85
ns
tRC
70
85
ns
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