参数资料
型号: MT45W2MW16BBB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
文件页数: 49/56页
文件大小: 709K
代理商: MT45W2MW16BBB-856WT
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
53
2003 Micron Technology, Inc. All rights reserved.
Figure 45: Asynchronous WRITE Followed by Asynchronous READ
NOTE:
1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least 5ns (tCPH) to schedule the
appropriate internal refresh operation. Otherwise, tCPH is only required after CE#-controlled WRITES.
VALID ADDRESS
tAVS
tAVH
tVPH
tVP
tVS
A[21:0]
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
ADV#
OE#
WE#
WAIT
DQ[15:0]
IN/OUT
VOH
VOL
VIH
VIL
VOH
VOL
CE#
LB#/UB#
tVP
tAVH
tCW
tWPH
tAS
tWP
tWC
tDH
tDW
DATA
High-Z
VALID ADDRESS
tAA
tBHZ
tAADV
tCPH1
tCO
VALID
OUTPUT
High-Z
tCVS
tOLZ
tLZ
tAS
tBLZ
tOHZ
tHZ
tAW
tWR
tBW
tWHZ
UNDEFINED
DON’T CARE
tOE
tAVS
tCVS
Table 45:
WRITE Timing Parameters—Async WRITE Followed by Async READ
SYMBOL
-70x
-856
UNITS
SYMBOL
-70x
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAS
00
ns
tDW
23
ns
tAVH
55
ns
tVP
10
ns
tAVS
10
ns
tVPH
10
ns
tAW
70
85
ns
tVS
70
85
ns
tBW
70
85
ns
tWC
70
85
ns
tCBPH
55
ns
tWHZ
88
ns
tCVS
10
ns
tWP
46
55
ns
tCW
70
85
ns
tWPH
10
ns
tDH
00
ns
tWR
00
ns
Table 46:
READ Timing Parameters—Async WRITE Followed by Async READ
SYMBOL
-70x
-856
UNITS
SYMBOL
-70x
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAA
70
85
ns
tCVS
10
ns
tAADV
70
85
ns
tHZ
88
ns
tAVH
55
ns
tLZ
10
ns
tAVS
10
ns
tOE
20
ns
tBHZ
88
ns
tOHZ
88
ns
tBLZ
10
ns
tOLZ
5
ns
tCO
70
85
ns
tVP
10
ns
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