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参数资料
| 型号： | MT45W2MW16BBB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54 |
| 文件页数： | 43/56页 |
| 文件大小： | 709K |
| 代理商： | MT45W2MW16BBB-856WT |
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4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
48
2003 Micron Technology, Inc. All rights reserved.
Figure 40: Asynchronous WRITE Followed by Burst READ
NOTE:
1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Latency code two (three clocks); WAIT active
LOW; WAIT asserted during delay.
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be provided every tCEM. A refresh
opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for greater than
15ns. Note that CellularRAM Workgroup 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
3. Clock rates below 50 MHz (tCLK > 20ns) are allowed as long as tCSP specifications are met.
tCLK
tSP
tHD
tSP
tHD
VALID
ADDRESS
tOHZ
tKOH
tACLK
High-Z
VALID ADDRESS
tAVS
tAVH
tAW
tWR
tVP
tVS
tCKA
A[21:0]
VIH
VIL
ADV#
VIH
VIL
OE#
VIH
VIL
WE#
VIH
VIL
WAIT
DQ[15:0]
IN/OUT
VOH
VOL
CLK
VIH
VIL
VIH
VIL
VOH
VOL
CE#
VIH
VIL
LB#/UB#
VIH
VIL
tCW
tWPH
tAS
tWP
tWC
tDH
tDW
DATA
High-Z
tCVS
tHD
tSP
tCEW
tSP tHD
tCSP
tWC
tBW
tWHZ
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
DON’T CARE
UNDEFINED
tABA
tBOE
tCBPH2
tVPH
Table 35:
WRITE Timing Parameters—Async WRITE Followed by Burst READ
SYMBOL
-70x
-856
UNITS
SYMBOL
-70x
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAS
00
ns
tDW
20
23
ns
tAVH
55
ns
tVP
10
ns
tAVS
10
ns
tVPH
10
ns
tAW
70
85
ns
tVS
70
85
ns
tBW
70
85
ns
tWC
70
85
ns
tCKA
70
85
ns
tWHZ
88
ns
tCVS
10
ns
tWP
46
55
ns
tCW
70
85
ns
tWPH
10
ns
tDH
0
ns
tWR
0
ns
Table 36:
READ Timing Parameters—Async WRITE Followed by Burst READ
SYMBOL
-701
-708
-706/-856
UNITS
SYMBOL
-701
-708
-706/-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tABA
35
46.5
56
ns
tCSP
420
4.5
20
5
20
ns
tACLK
79
11
ns
tHD
22
2
ns
tBOE
20
ns
tKOH
2
ns
tCBPH
55
5
ns
tOHZ
88
8
ns
tCEW
17.5
17.517.5
ns
tSP
3
ns
tCLK
9.62
20
12.5
20
15
20
ns
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相关代理商/技术参数 |
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| MT45W2MW16BFB-601 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-701 WT | 制造商:Micron Technology Inc 功能描述: |
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| MT45W2MW16BFB-856 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays |
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