- 您现在的位置：买卖IC网 > PDF目录299522 > MT45W2MW16BBB-856WT 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 PDF资料下载
参数资料
| 型号： | MT45W2MW16BBB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54 |
| 文件页数： | 55/56页 |
| 文件大小： | 709K |
| 代理商： | MT45W2MW16BBB-856WT |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页当前第55页第56页
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
8
2003 Micron Technology, Inc. All rights reserved.
Part-Numbering Information
Micron CellularRAM devices are available in several
different configurations and densities (see Figure 2).
Figure 2: Part Number Chart
NOTE:
1. -30°C exceeds the CellularRAM Workgroup 1.0 specification of -25°C.
Valid Part Number Combinations
After building the part number from the part num-
bering chart, please go to the Micron Part Marking
Decoder Web site at
search to verify that the part number is offered and
valid. If the device required is not on this list, please
contact the factory.
Device Marking
Due to the size of the package, the Micron standard
part number is not printed on the top of the device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross-referenced to the Micron part
numbers at http://www.micron.com/partsearch. To
view the location of the abbreviated mark on the
device, please refer to customer service note, CSN-11,
“Product Mark/Label," at http://www.micron.com/
csn.
MT 45
W 4M W
16
B
FB -70
6
WT ES
Micron Technology
Product Family
45 = PSRAM/CellularRAM Memory
Operating Core Voltage
W = 1.70V–1.95V
Address Locations
M = Megabits
Operating Voltage
W = 1.70V–3.30V
Bus Configuration
16 = x16
READ/WRITE Operation Mode
B = Asynchronous/Page/Burst
Package Codes
FB = VFBGA (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball
BB = Lead-free VFBGA (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball (contact factory)
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature
WT = -30C to +85C (see Note 1)
IT = -40 to +85C (contact factory)
Standby Power Options
Blank = Standard
L = Low Power
Frequency
6 = 66 MHz
8 = 80 MHz
1 = 104 MHz (contact factory)
Access/Cycle Time
60 = 60ns (contact factory)
70 = 70ns
85 = 85ns
相关PDF资料 |
PDF描述 |
|---|---|
| MT46H32M32LGCM-5IT:A | 32M X 32 DDR DRAM, 5 ns, PBGA90 |
| MT46HC32M16LFCX-75:B | 32M X 16 DDR DRAM, 7.5 ns, PBGA90 |
| MT46HC32M16LGCM-54IT:B | 32M X 16 DDR DRAM, 5.4 ns, PBGA90 |
| MT47H32M16BT-37VL:A | 32M X 16 DDR DRAM, 0.5 ns, PBGA92 |
| MT47H64M16HQ-3IT:G | 64M X 16 DDR DRAM, 0.4 ns, PBGA60 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MW16BFB-601 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-701 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays |
| MT45W2MW16BFB-708 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS - Trays |
| MT45W2MW16BFB-856 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays |
发布紧急采购，3分钟左右您将得到回复。