参数资料
型号: MT45W2MW16BBB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
文件页数: 3/56页
文件大小: 709K
代理商: MT45W2MW16BBB-856WT
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
11
2003 Micron Technology, Inc. All rights reserved.
Figure 7: Burst Mode READ (4-word burst)
NOTE:
1. Non-default BCR settings for burst mode READ (4-word burst): Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
Figure 8: Burst Mode WRITE (4-word burst)
NOTE:
1. Non-default BCR settings for burst mode WRITE (4-word burst): Latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
A[21:0]
D[0]
ADV#
CE#
OE#
D[1]
D[2]
D[3]
WE#
WAIT
DQ[15:0]
LB#/UB#
Latency Code 2 (3 clocks)
CLK
UNDEFINED
DON’T CARE
READ Burst Identified
(WE# = HIGH)
ADDRESS
VALID
A[21:0]
D[0]
ADV#
CE#
OE#
D[1]
D[2]
D[3]
WE#
WAIT
DQ[15:0]
LB#/UB#
ADDRESS
VALID
Latency Code 2 (3 clocks)
CLK
DON’T CARE
WRITE Burst Identified
(WE# = LOW)
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相关代理商/技术参数
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MT45W2MW16BFB-701 WT 制造商:Micron Technology Inc 功能描述:
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