参数资料
型号: MT45W2MW16BBB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
文件页数: 39/56页
文件大小: 709K
代理商: MT45W2MW16BBB-856WT
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
44
2003 Micron Technology, Inc. All rights reserved.
Figure 36: Asynchronous WRITE Using ADV#
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
A[21:0]
ADV#
CE#
LB#/UB#
OE#
WE#
WAIT
DQ[15:0]
IN
VIH
VIL
VALID ADDRESS
High-Z
tCEW
tHZ
VALID INPUT
tVS
DON’T CARE
tCW
tDW
DQ[15:0]
OUT
VOH
VOL
tWHZ
tBW
tLZ
tWP
tDH
tOW
tAS
tWPH
tAS
tVPH
tAVH
tAVS
tVP
tAW
High-Z
Table 30:
Asynchronous WRITE Timing Parameters Using ADV#
SYMBOL
-70x
-856
UNITS
SYMBOL
-70x
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAS
00
ns
tHZ
88
ns
tAVH
5
ns
tLZ
10
ns
tAVS
10
ns
tOW
55
ns
tAW
70
85
ns
tVP
10
ns
tBW
70
85
ns
tVPH
10
ns
tCEW
1
7.5
1
7.5
ns
tVS
70
85
ns
tCW
70
85
ns
tWHZ
8
ns
tDH
0
ns
tWP
46
55
ns
tDW
23
ns
tWPH
10
ns
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