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参数资料
| 型号： | MT45W2MW16BBB-856WT |
| 元件分类： | SRAM |
| 英文描述： | 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54 |
| 文件页数： | 42/56页 |
| 文件大小： | 709K |
| 代理商： | MT45W2MW16BBB-856WT |
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4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
47
2003 Micron Technology, Inc. All rights reserved.
Figure 39: Burst WRITE Followed by Burst READ
NOTE:
1. Non-default BCR settings for burst WRITE followed by burst READ: Latency code two (three clocks); WAIT active LOW;
WAIT asserted during delay.
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be provided every tCEM. A refresh
opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for greater than
15ns. Note that CellularRAM Workgroup 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
3. Clock rates below 50 MHz (tCLK > 20ns) are allowed as long as tCSP specifications are met.
A[21:0]
VIH
VIL
ADV#
VIH
VIL
CE#
VIH
VIL
OE#
VIH
VIL
WE#
VIH
VIL
WAIT
DQ[15:0]
IN/OUT
VOH
VOL
CLK
VIH
VIL
VIH
VIL
tCLK
tSP
tSP tHD
tCSP
D[3]
D[2]
D[1]
D[0]
VALID
ADDRESS
tHD
tSP
tHD
tSP
tSP tHD
VALID
ADDRESS
tABA
tCSP
tOHZ
tKOH
tACLK
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
High-Z
VOH
VOL
LB#/UB#
VIH
VIL
tHD
tSP tHD
tHD
High-Z
UNDEFINED
DON’T CARE
tBOE
tCBPH2
High-Z
tSP tHD
Table 33:
WRITE Timing Parameters—Burst WRITE Followed by Burst READ
SYMBOL
-701
-708
-706/-856
UNITS
SYMBOL
-701
-708
-706/-856
UNITS
MIN MAX MIN MAX MIN MAX
tCBPH
55
5
ns
tHD
222
ns
tCLK
9.62
20
12.5
20
15
20
ns
tSP
3
ns
tCSP
4
20
4.5
20520
ns
Table 34:
READ Timing Parameters—Burst WRITE Followed by Burst READ
SYMBOL
-701
-708
-706/-856
UNITS
SYMBOL
-701
-708
-706/-856
UNITS
MIN MAX MIN MAX MIN MAX
tABA
35
46.5
56
ns
tHD
22
2
ns
tACLK
79
11
ns
tKOH
2
ns
tBOE
20
ns
tOHZ
8
ns
tCLK
9.62
20
12.5
20
15
20
ns
tSP
33
3
ns
tCSP
420
4.5
20520
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W2MW16BFB-601 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-701 WT | 制造商:Micron Technology Inc 功能描述: |
| MT45W2MW16BFB-706 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays |
| MT45W2MW16BFB-708 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS - Trays |
| MT45W2MW16BFB-856 WT | 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays |
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