参数资料
型号: MT45W2MW16BBB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
文件页数: 17/56页
文件大小: 709K
代理商: MT45W2MW16BBB-856WT
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
24
2003 Micron Technology, Inc. All rights reserved.
Absolute Maximum Ratings
Voltage to Any Ball Except VCC, VCCQ Relative to VSS . .
0.50V to (4.0V or VCCQ + 0.3V, whichever is less)
Voltage on VCC Supply Relative to VSS. . -0.2V to +2.45V
Voltage on VCCQ Supply Relative to VSS . -0.2V to +4.0V
Storage Temperature (plastic). . . . . . . . -55C to +150C
Operating Temperature (case)
Wireless (see Note 1) . . . . . . . . . . . . . . -30C to +85C
Industrial . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Soldering Temperature and Time
10s (solder ball only) . . . . . . . . . . . . . . . . . . . . . +260C
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
NOTE:
1. -30°C exceeds the CellularRAM Workgroup 1.0 specifi-
cation of -25°C.
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相关代理商/技术参数
参数描述
MT45W2MW16BFB-601 WT 制造商:Micron Technology Inc 功能描述:
MT45W2MW16BFB-701 WT 制造商:Micron Technology Inc 功能描述:
MT45W2MW16BFB-706 WT 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS 54VFBGA - Trays
MT45W2MW16BFB-708 WT 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 70NS - Trays
MT45W2MW16BFB-856 WT 制造商:Micron Technology Inc 功能描述:PSRAM ASYNC 1 32MBIT 2MX16 85NS 54VFBGA - Trays