参数资料
型号: MT45W2MW16BBB-856WT
元件分类: SRAM
英文描述: 2M X 16 PSEUDO STATIC RAM, 85 ns, PBGA54
封装: 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
文件页数: 29/56页
文件大小: 709K
代理商: MT45W2MW16BBB-856WT
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
09005aef80be1fbd pdf/09005aef80be2036 zip
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Burst CellularRAM_2.fm - Rev. D 9/04 EN
35
2003 Micron Technology, Inc. All rights reserved.
Figure 27: Page Mode READ
A[3:0]
ADV#
CE#
LB#/UB#
OE#
WE#
WAIT
DQ[15:0]
VALID ADDRESS
tAA
tHZ
tBA
High-Z
tCO
tCEM
tBLZ
tBHZ
tOHZ
tHZ
tLZ
tOE
tOLZ
tCEW
High-Z
UNDEFINED
DON’T CARE
A[21:4]
VALID ADDRESS
VALID
ADDRESS
VALID
ADDRESS
VALID
ADDRESS
tRC
VALID
OUTPUT
tAPA
tPC
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VIH
VIL
tOH
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
Table 21:
Asynchronous READ Timing Parameters—Page Mode Operation
SYMBOL
-70x
-856
UNITS
SYMBOL
-70x
-856
UNITS
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tAA
70
85
ns
tHZ
8
ns
tAPA
20
25
ns
tLZ
10
ns
tBA
70
85
ns
tOE
20
ns
tBHZ
8
ns
tOH
5
ns
tBLZ
10
ns
tOHZ
8
ns
tCEM
88
s
tOLZ
5
ns
tCEW
1
7.5
1
7.5
ns
tPC
20
25
ns
tCO
70
85
ns
tRC
70
85
ns
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