收藏本站
参数资料
型号： W631GG6KB-15
厂商： Winbond Electronics
文件页数： 114/159页
文件大小： 0K
描述： IC DDR3 SDRAM 1GBIT 96WBGA
标准包装： 200
格式 - 存储器： RAM
存储器类型： DDR3 SDRAM
存储容量： 1G（64M x 16）
速度： 667MHz
接口： 并联
电源电压： 1.425 V ~ 1.575 V
工作温度： 0°C ~ 85°C
封装/外壳： 96-TFBGA
供应商设备封装： 96-WBGA（9x13）
包装： 托盘
W631GG6KB
10.9.2 ODT DC Electrical Characteristics
An overview about the specification requirements for R TT and ΔV M is provided in Table 32.
Table 32 – ODT DC Impedance and Mid-Level Requirements
MR1 A9, A6, A2
0, 1, 0
0, 0, 1
0, 1, 1
1, 0, 1
1, 0, 0
R TT
120 Ω
6 0 Ω
4 0 Ω
3 0 Ω
2 0 Ω
Resistor
R TT 120
R TT 60
R TT 40
R TT 30
R TT 20
V out
V IL(AC) to V IH(AC)
Min.
0.9
0.9
0.9
0.9
0.9
Nom.
1.0
1.0
1.0
1.0
1.0
Max.
1.6
1.6
1.6
1.6
1.6
Unit
R ZQ /2
R ZQ /4
R ZQ /6
R ZQ /8
R ZQ /12
Notes
1, 2, 3, 4
1, 2, 3, 4
1, 2, 3, 4
1, 2, 3, 4
1, 2, 3, 4
Deviation of V M with respect to V DDQ /2, ΔV M
-5
+5
%
1, 2, 3, 4, 5
Notes:
1. With RZQ = 240 Ω .
2. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance
limits if temperature or voltage changes after calibration, see the following section ODT temperature and voltage sensitivity.
3. The tolerance limits are specified under the condition that V DDQ = V DD and that V SSQ = V SS .
4. Measurement definition for R TT :
Apply V IH(AC) to pin under test and measure current I(V IH(AC) ), then apply V IL(AC) to pin under test and measure current
I(V IL(AC) ) respectively. Calculate R TT as follows:
R TT = [V IH(AC) - V IL(AC) ] / [I (V IH(AC) ) - I (V IL(AC) )]
5. Measurement definition for V M and Δ V M :
Measure voltage (V M ) at test pin (midpoint) with no load. Calculate ΔV M as follows:
ΔV M = (2 × V M / V DDQ - 1) × 100%.
10.9.3 ODT Temperature and Voltage sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to Table 33
and Table 34. The following definitions are used:
Δ T = T - T (@calibration); Δ V = V DDQ - V DDQ (@calibration); V DD = V DDQ
Table 33 – ODT Sensitivity Definition
SYMBOL
R TT
MIN.
0.9 - dR TT dT × |ΔT| - dR TT dV × |ΔV|
MAX.
1.6 + dR TT dT × |ΔT| + dR TT dV × |ΔV|
UNIT
RZQ/2,4,6,8,12
Table 34 – ODT Voltage and Temperature Sensitivity
SYMBOL
dR TT dT
dR TT dV
MIN.
0
0
MAX.
1.5
0.15
UNIT
%/°C
%/mV
Note: These parameters may not be subject to production test. They are verified by design and characterization
Publication Release Date: Dec. 09, 2013
Revision A05
- 114 -
相关PDF资料
PDF描述
W9412G6IH-5 IC DDR-400 SDRAM 128MB 66TSSOPII
W9412G6JH-5I IC DDR SDRAM 128MBIT 66TSOPII
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
W9425G6JH-5I IC DDR SDRAM 256MBIT 66TSOPII
W947D2HBJX5E IC LPDDR SDRAM 128MBIT 90VFBGA
相关代理商/技术参数
参数描述
W631GG8KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-12 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR3 SDRAM 1G-Bit 128Mx8 1.5V 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-15 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W632 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount
W632GG6KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 2GBIT 96WBGA
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*