参数资料
型号: W631GG6KB-15
厂商: Winbond Electronics
文件页数: 55/159页
文件大小: 0K
描述: IC DDR3 SDRAM 1GBIT 96WBGA
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR3 SDRAM
存储容量: 1G(64M x 16)
速度: 667MHz
接口: 并联
电源电压: 1.425 V ~ 1.575 V
工作温度: 0°C ~ 85°C
封装/外壳: 96-TFBGA
供应商设备封装: 96-WBGA(9x13)
包装: 托盘
W631GG6KB
T0
T1
T2
T10
T11
T16
T18
T19
T20
T21
T22
T23
T24
T25
T26
T27
CK#
CK
Command
NOP
READ
NOP
NOP
NOP
PRE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ACT
Address
Bank a,
Col n
AL = CL - 2 = 9
t RTP
Bank a,
(or all)
CL = 11
t RP
Bank a,
Row b
RL = 20
DQS, DQS#
BL4 Operation:
DQ
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
DQS, DQS#
BL8 Operation:
DQ
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
NOTES: 1. RL = 20 (CL = 11, AL = CL - 2)
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. The example assumes t RAS.MIN is satisfied at Precharge command time (T16) and that t RC.MIN is satisfied at the next Active command time (T27).
TIME BREAK
TRANSITIONING DATA
DON'T CARE
Figure 39 – READ to PRECHARGE (RL = 20, AL = CL-2, CL = 11, t RTP = 6, t RP = 11)
Publication Release Date: Dec. 09, 2013
Revision A05
- 55 -
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