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| 型号： | W631GG6KB-15 |
| 厂商： | Winbond Electronics |
| 文件页数： | 98/159页 |
| 文件大小： | 0K |
| 描述： | IC DDR3 SDRAM 1GBIT 96WBGA |
| 标准包装： | 200 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR3 SDRAM |
| 存储容量： | 1G（64M x 16） |
| 速度： | 667MHz |
| 接口： | 并联 |
| 电源电压： | 1.425 V ~ 1.575 V |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 96-TFBGA |
| 供应商设备封装： | 96-WBGA（9x13） |
| 包装： | 托盘 |
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W631GG6KB
10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Rating s
PARAMETER
Voltage on V DD pin relative to V SS
Voltage on V DDQ pin relative to V SS
Voltage on any pin relative to V SS
Storage Temperature
SYMBOL
V DD
V DDQ
V IN , V OUT
T STG
RATING
-0.4 ~ 1.975
-0.4 ~ 1.975
-0.4 ~ 1.975
-55 ~ 150
UNIT
V
V
V
°C
NOTES
1, 3
1, 3
1
1, 2
Notes:
1. Stresses greater than those listed under ―Absolute Maximum Ratings‖ may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
3. V DD and V DDQ must be within 300 mV of each other at all times. V REFDQ and V REFCA must not greater than 0.6 x V DDQ .
When V DD and V DDQ are less than 500 mV, V REFDQ and V REFCA may be equal to or less than 300 mV.
10.2 Operating Temperature Condition
PARAMETER
Operating Temperature (for -11/-12/-15)
Operating Temperature (for 12I/12A/15I/15A)
Operating Temperature (for 12A/15A)
Operating Temperature (for 12K/15K)
Operating Temperature (for 12K/15K)
SYMBOL
T CASE
T CASE
T A
T CASE
T A
RATING
0 ~ 85
-40 ~ 95
-40 ~ 95
-40 ~ 105
-40 ~ 105
UNIT
°C
°C
°C
°C
°C
NOTES
1, 3, 5
1, 3, 4, 5, 6, 7
2
1, 3, 4, 5, 6, 8
2
Notes:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2. Operating ambient temperature is the surrounding temperature of the DRAM.
3. Supporting 0°C ≤ T CASE ≤ 85 °C with full JEDEC AC and DC specifications.
4. Supporting -40°C ≤ T CASE ≤ 85 °C with full JEDEC AC and DC specifications.
5. Supporting 0°C ≤ T CASE ≤ 8 5°C and being able to extend to 95°C operating temperature. Full specifications are provided in
this range, but the following additional conditions apply:
(a) Refresh commands have to be doubled in frequency, therefore reducing the Refresh interval t REFI to 3.9 μS.
(b) If Self-Refresh operation is required in the Extended Temperature Range, than it is mandatory to either use the Manual
Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0 b and MR2 A7 = 1 b ) or enable the Auto
Self-Refresh mode (ASR) (MR2 A6 = 1 b , MR2 A7 is don't care).
6. Supporting -40°C ≤ T CASE ≤ 8 5°C and being able to extend to 95°C (for 12I/12A/15I/15A) or 105°C (for 12K/15K) operating
temperature. Full specifications are provided in this range, but the following additional conditions apply:
(a) Refresh commands have to be doubled in frequency, therefore reducing the Refresh interval t REFI to 3.9 μS.
(b) If Self-Refresh operation is required in the Extended Temperature Range, than it is mandatory to either use the Manual
Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0 b and MR2 A7 = 1 b ) or enable the Auto
Self-Refresh mode (ASR) (MR2 A6 = 1 b , MR2 A7 is don't care).
7. During operation, the DRAM case temperature must be maintained between -40 to 95°C for 12I/12A/15I/15A parts under all
specification parameters.
8. During operation, the DRAM case temperature must be maintained between -40 to 105°C for 12K/15K parts under all
specification parameters.
Publication Release Date: Dec. 09, 2013
Revision A05
- 98 -
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