参数资料
型号: W631GG6KB-15
厂商: Winbond Electronics
文件页数: 43/159页
文件大小: 0K
描述: IC DDR3 SDRAM 1GBIT 96WBGA
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR3 SDRAM
存储容量: 1G(64M x 16)
速度: 667MHz
接口: 并联
电源电压: 1.425 V ~ 1.575 V
工作温度: 0°C ~ 85°C
封装/外壳: 96-TFBGA
供应商设备封装: 96-WBGA(9x13)
包装: 托盘
W631GG6KB
8.13 READ Operation
8.13.1 READ Burst Operation
During a READ or WRITE command, DDR3 will support BC4 and BL8 on the fly using address A12
during the READ or WRITE (AUTO PRECHARGE can be enabled or disabled).
A12 = 0, BC4 (BC4 = burst chop, t CCD = 4)
A12 = 1, BL8
A12 is used only for burst length control, not as a column address.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CK#
CK
Command* 3
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address* 4
Bank
Col n
DQS, DQS#
t RPRE
t RPST
DQ* 2
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
CL = 6
RL = AL + CL
Notes:
TRANSITIONING DATA
DON'T CARE
1.
2.
3.
4.
BL8, RL = 6, AL = 0, CL = 6.
Dout n = data-out from column n.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BL8 setting activated by either MR0 A[1:0] = 00 or MR0 A[1:0] = 01 and A12 = 1 during READ command at T0.
Figure 21 – READ Burst Operation RL = 6 (AL = 0, CL = 6, BL8)
T0
T1
T5
T6
T10
T11
T12
T13
T14
T15
T16
CK#
CK
Command* 3
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Address* 4
Bank
Col n
DQS, DQS#
t RPRE
t RPST
DQ* 2
Dout
n
Dout
n+1
Dout
n+2
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+6
Dout
n+7
AL = 5
CL = 6
RL = AL + CL
Notes:
TIME BREAK
TRANSITIONING DATA
DON'T CARE
1.
2.
3.
4.
BL8, RL = 11, AL = (CL - 1), CL = 6.
Dout n = data-out from column n.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BL8 setting activated by either MR0 A[1:0] = 00 or MR0 A[1:0] = 01 and A12 = 1 during READ command at T0.
Figure 22 – READ Burst Operation RL = 11 (AL = 5, CL = 6, BL8)
Publication Release Date: Dec. 09, 2013
Revision A05
- 43 -
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