参数资料
型号: W631GG6KB-15
厂商: Winbond Electronics
文件页数: 24/159页
文件大小: 0K
描述: IC DDR3 SDRAM 1GBIT 96WBGA
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR3 SDRAM
存储容量: 1G(64M x 16)
速度: 667MHz
接口: 并联
电源电压: 1.425 V ~ 1.575 V
工作温度: 0°C ~ 85°C
封装/外壳: 96-TFBGA
供应商设备封装: 96-WBGA(9x13)
包装: 托盘
W631GG6KB
8.3.4
Mode Register MR3
The Mode Register MR3 controls Multi purpose registers. The Mode Register 3 is written by asserting
low on CS#, RAS#, CAS#, WE#, high on BA1 and BA0, and low on BA2 while controlling the states of
address pins according to the Figure 8 below.
BA2
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Address Field
0* 1
1
1
0* 1
MPR
MPR Loc
Mode Register 3
MPR Operation
MPR Address
BA1
0
0
1
1
BA0
0
1
0
1
MR Select
MR0
MR1
MR2
MR3
A2
0
1
MPR
Normal operation *3
Dataflow from MPR
A1
0
0
1
1
A0
0
1
0
1
MPR location
Predefined pattern *2
RFU
RFU
RFU
Notes:
1. BA2, A3~A12 are reserved for future use and must be programmed to 0 during MRS.
2. The predefined pattern will be used for read synchronization.
3. When MPR control is set for normal operation (MR3 A[2] = 0) then MR3 A[1:0] will be ignored.
Figure 8 – MR3 Definition
8.3.4.1
Multi Purpose Register (MPR)
The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration
bit sequence. To enable the MPR, a MODE Register Set (MRS) command must be issued to MR3
Register with bit A2 = 1. Prior to issuing the MRS command, all banks must be in the idle state (all
banks precharged and t RP met). Once the MPR is enabled, any subsequent RD or RDA commands
will be redirected to the Multi Purpose Register. When the MPR is enabled, only RD or RDA
commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3 bit
A2 = 0). Power Down mode, Self Refresh, and any other non-RD/RDA command is not allowed during
MPR enable mode. The RESET function is supported during MPR enable mode. For detailed MPR
operation refer to section 8.10 “ Multi Purpose Register ” on page 34.
Publication Release Date: Dec. 09, 2013
Revision A05
- 24 -
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