参数资料
型号: SIS600
厂商: SILICON INTEGRATED SYSTEMS CORP
元件分类: 外设及接口
英文描述: MULTIFUNCTION PERIPHERAL, PBGA487
封装: BGA-487
文件页数: 58/144页
文件大小: 1592K
代理商: SIS600
SiS600 Pentium II PCI /A.G.P. Chipset
Preliminary V1.0 Jan. 25, 1999
17
Silicon Integrated Systems Corporation
SCAS#
O
SDRAM Column Address Strobe :
SDRAM latches column address on the positive edge of the
clock with SCAS# low.
It is driven to low by SiS600 when
column access.
MPD[7:0]
I/O
Memory ECC Data Bus :
These signals carry memory ECC data during read/write to
DRAM.
CKE[0:5]
O
SDRAM Clock Enable 0~5:
While in ACPI S2 or S3 state, SiS600 can put the SDRAM
in the self-refresh mode by CKE[0:5] signals. During power
down mode, CKE[0:5] signals of DIMM module must be
kept low by SiS5595’s CKES signal.
4.1.3. PCI INTERFACE
NAME
TYPE ATTR
DESCRIPTION
PCICLK
I
PCI Clock :
The PCICLK input provides the fundamental timing and the
internal operating frequency for SiS600. It runs at the same
frequency and skew of the PCI local bus.
C/BE[3:0]#
I/O
PCI Bus Command and Byte Enables :
PCI Bus Command and Byte Enables define the PCI command
during the address phase of a PCI cycle, and the PCI byte
enables during the data phases. C/BE[3:0]# are outputs when
SiS600 is a PCI bus master and inputs when it is a PCI slave.
AD[31:0]
I/O
PCI Address /Data Bus :
In address phase:
1.When SiS600 is a PCI bus master, AD[31:0] are output
signals.
When SiS600 is a PCI target, AD[31:0] are input signals.
In data phase:
1. When SiS600 is a target of a memory read/write cycle,
AD[31:0] are floating.
2. When SiS600 is a target of a configuration or an I/O cycle,
AD[31:0] are output signals in a read cycle, and input signals in
a write cycle.
PAR
I/O
Parity :
Parity is an even parity which is generated across AD[31:0] and
C/BE[3:0]#.
相关PDF资料
PDF描述
SL15100ZC-XXX 200 MHz, OTHER CLOCK GENERATOR, PDSO8
SL15100ZI-XXX 200 MHz, OTHER CLOCK GENERATOR, PDSO8
SL18860DCT 52 MHz, OTHER CLOCK GENERATOR, PDSO10
SL28504RZC OTHER CLOCK GENERATOR, PDSO64
SL28504RLCT OTHER CLOCK GENERATOR, QCC64
相关代理商/技术参数
参数描述
SIS776DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
SIS776DN-T1-GE3 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 30V 18.3A 1212-8
SiS778DN-T1-GE3 功能描述:MOSFET 30 Volts 35 Amps 52 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIS780DN 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiS780DN-T1-GE3 功能描述:MOSFET 30 Volts 18 Amps 27.7 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube