Electrical Specifications
Absolute Ratings
Stresses greater than those listed in
Table 6 may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation of the device at these or any
other conditions outside those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
Table 6: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Units
Notes
VDD
VDD supply voltage relative to VSS
–0.4
1.975
V
VDDQ
VDD supply voltage relative to VSSQ
–0.4
1.975
V
VIN, VOUT
Voltage on any pin relative to VSS
–0.4
1.975
V
TC
Operating case temperature
0
95
°C
TSTG
Storage temperature
–55
150
°C
Notes: 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be
greater than 0.6 × VDDQ. When VDD and VDDQ are less than 500mV, VREF may be ≤300mV.
2. MAX operating case temperature. TC is measured in the center of the package.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC dur-
ing operation.
2Gb: x4, x8, x16 DDR3 SDRAM
Electrical Specifications
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
29
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